Institute of Vacuum Technology, 44/50 Dluga Str., Pl.-00-241 Warszawa, Poland

Ultrahigh Vacuum Atomic Layer Epitaxy of Ternary II-VI Semiconductor Compounds 

A concise discussion concerning the UHV ALE growth of ternary II-VI compounds is presented in this paper. Simultaneous reflection mass spectrometry (REMS) and reflection high energy electron diffraction (RHEED) measurements of the surface kinetic and structural parameters, respectively, governing the UHV ALE growth of Cd_1-xZn_xTe and Cd_1-xMn_xTe heteroepitaxial films are reported. In addition, a Monte-Carlo-based method for simulation of the UHV ALE process of CdTe (the model-compound for this growth technique) has been used for investigation of the Cd cation's fluxes reflected from the growing epilayer surface in different phases of the ALE process. The Cd⁺ ion-related REMS signals measured during CdTe growth have been compared with the simulation results.
 

Keywords: Thin film growth, Adsorption and desorption kinetics, Atomic layer epitaxy, Molecular and atomic beam epitaxy
 

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