Institut für Halbleiterphysik, Johannes Kepler Universität Linz, Altenbergerstrasse 69, A-4040 Linz, Austria

Self-Assembled Germanium-Dot Multilayers Embedded in Silicon

We report mainly on structural investigations on nanoscale Ge rich islands, the growth of which is driven by misfit strain (Stranski-Krastanow growth mode). Results of several methods, i.e. atomic force microscopy, transmission electron microscopy, and mainly x-ray diffraction and x-ray reflectivity measurements are presented and discussed.

Keywords: Stranski-Krastanow growth, x-ray diffraction, x-ray reflectivity, inhomogeneous strain fields, Ge islands, low dimensional structures
 

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