Abstract of Crystal Research and Technology 34 (1999) 285

Crystal Research and Technology
Cryst. Res. Technol. 34 (1999) 285 - Abstract -

Y. Z. GAO, T. YAMAGUCHI

Research Institute of Electronics, Shizuoka University, Johoku 3-5-1, Hamamatsu 432, Japan

Liquid Phase Epitaxial Growth and Properties of InSbBi Films grown from In, Bi and Sn Solutions

InSb_1-xBi_x (0.01< x< 0.14) epi-layers were grown from In, Bi and Sn solutions by liquid phase epitaxy (LPE) technique on (100) InSb substrates. The InSbBi films were characterized by optical microscopy, electron-probe micro analysis (EPMA), Van der Pauw and FTIR transmission measurements. The surface morphology and the transmittance spectra of the epi-layers were strongly related to the cooling rate of the solutions during growth. Sn and Bi metal particles were appeared on the surface of the InSbBi films grown from Sn solution with a cooling rate of 3K/min and a sharp decrease of transmittance was observed in the wavelength range longer than 14 痠 for the epi-layers with cooling rate of 1.5K/min. A room temperature electron mobility of 3.06 x 10⁴ cm²/Vs with a carrier density of 6 x 10¹⁸ cm^-3 for the InSbBi films have been obtained indicating a high quality of the epi-layers.

Keywords: InSbBi, Liquid Phase Epitaxy, Surface morphology

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