Crystal Research and Technology
Cryst. Res. Technol. 34 (1999) 293 - Abstract -

V.N. KURLOV, F. THEODORE

CEA CEREM / Département d'Etudes des Matériaux, Grenoble, France.

Growth of Sapphire Crystals of Complicated Shape

An original apparatus allows the growth of sapphire single crystals with complicated forms. Edge-defined Film-fed Growth (EFG) or Stepanov method, Growth from an Element of Shape (GES) method, as well as imaginative combined variants of those processes are available with this equipment. Related to the growth parameters, the quality of the crystals pulled from the melt is investigated in terms of minor gas bubbles distribution and misorientation. X-ray transmission, optical microscopy together with light transmittance measurements are the tools to make sure of optical applications for those products.

Keywords: Crystal growth, Sapphire, Complicated shape



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