Compositional inhomogeneities of (Si,Ge) single crystals grown by the radio frequency (RF) heated float zone technique have been studied using the back-scattered electron (BSE) mode of a scanning electron microscope. Numerical analysis of the images by Fast Fourier Transformation (FFT) showed that the number of spatial frequencies with substantial amplitudes is increased when investigating longitudinal sections of crystals containing dislocations instead of dislocation-free crystals. This can be attributed to different growth conditions in terms of super-cooling.
Keywords: fourier analysis, scanning electron microscopy, doping and impurity implantation
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