The basic principles of the contactless growth of crystals from the vapor in combination with the process of low-supersaturation nucleation are discussed. The mathematical formulation of the morphological stability criterion in vapor growth systems is given and its implications for contactless growth technique are analysed. A diagram for selection of proper temperature conditions for growth of CdTe crystals is presented.

Keywords: Theory and modeling of crystal growth, Growth from the vapor, Computational modeling, Cadmium telluride

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