The results on growth mechanism of GaAs layers by epitaxial lateral overgrowth (ELO) technique from the liquid phase are reviewed. In particular, effects of melt supersaturation, seed orientation, density of surface steps and growth temperature on properties of ELO layers are discussed. It is shown that the results obtained are not a specific attribute of LPE ELO growth of GaAs layers on GaAs substrates but represent a more general phenomena encountered during the ELO growth of other epitaxial systems.
Keywords: GaAs, epitaxial lateral overgrowth, liquid phase epitaxy (LPE), Gibbs-Thomson effect
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