The process of porous silicon, preparation from p-type Czochralski grown silicon, CZ-Si, subjected to different preanneal proceses was studied. It was found that defects generated by oxygen precipitation in the Cz-Si substrates can markedly influence the porous silicon preparation. Enhanced hydrostatic pressure of gas ambient during annealing of Cz-Si at 1350°C leads to the generation of some extended defects in Cz-Si which affect photoluminescence from porous silicon obtained from such substrates. A relation between the concentration of defects in the Cz-Si substrates and the porous silicon structure and its photoluminescence was observed. Dependence of photoluminescence and porous silicon structure on the kind and concentration of oxygen related defects in the Cz-Si substrate was found.
Keywords: porous silicon, oxygen precipitation, high pressure, photoluminescence, defects
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