The present paper reviews presentation of the present status of high pressure solution growth of GaN single crystals and their characterization. The main aspects of the growth include: the thermodynamic properties of the system, the kinetic description of the growth which include the N2 dissolution, the volume transport and the surface kinetics. The important properties of GaN crystals derived from optical, x-ray, electron transport and positron annihilation measurements are presented. Also etching properties and their relation to the growth morphology and doping are discussed.
Keywords: crystal growth, thermodynamics, GaN, growth habit, optical properties, surface preparation
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