Crystal Research and Technology
Cryst. Res. Technol. 35 (2000) 5 - Abstract -

W. Seifert, P. Reinshaus

Fachbereich Physik, Martin-Luther-Universität Halle-Wittenberg, Halle (Saale), Germany

Axial Solute Transport during Bridgman Growth of BiSbTe3-Mixed Crystals - a comparison of analytical and numerical results

2D/3D-transient finite-element computer simulations of heat and mass transport including convection have been performed for a Bridgman configuration close to real growth conditions. The results for the axial distribution of the excessive tellurium in BiSbTe3 semiconductor crystals grown from the melt are compared with the predictions of analytical segregation models.It is shown that Favier's model can be successfully applied for quantitatively estimating model parameters of segregation. Finally, the transition from normal gravity to microgravity conditions is discussed.

Keywords: crystal growth, bridgman technique, axial segregation, finite element method


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