The preparation of a new type of InGaAsP/InP heterostructures for light emitting diodes is presented. The active region of the heterostructure contains thin layers of nondoped InGaAsP (lambda=1.3mikrom) alternating with barrier layers of InGaAsP (lambda=1.1mikrom) doped by cobalt. Properties of prepared heterostructures were tested on edge emitting diodes with the stripe geometry. Curves of the minority carrier lifetime and the optical power versus current are compared with those obtained on classical bulk InGaAsP/InP double heterostructure. It is shown that the new structure is very eligible for construction of high- speed noncoherent 1.3mikrom diodes operating at low pumping current.
Keywords: LPE, heterostructures, LED
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