Crystal Research and Technology
Cryst. Res. Technol. 35 (2000) 117 - Abstract -

M. Morhac, E. Morhacova*

Institute of Physics, Slovak Academy of Sciences, Bratislava, Slovak Republic
*Institute of Inorganic Chemistry, Slovak Academy of Sciences, Bratislava, Slovak Republic

Monte Carlo Simulation Algorithms of Grain Growth in Polycrystalline Materials

In the paper we present a variety of Monte Carlo algorithms, that can be employed to simulate the grain growth in polycrystalline materials during sintering. The simulation algorithms of monophase or two-phase structure, on both the square and triangular distribution of lattice points, possibly with the second phase particles being either of static or dynamic nature, are described. The paper deals with oriented and anisotropic grain growth as well. A considerable number of input parameters in the simulation procedure makes it possible to set up a large amount of combinations of conditions under which we want to simulate the sintering process.

Keywords: simulation, Q-state model, polycrystalline materials, oriented structures, pore migration, grain growth



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