Crystal Research and Technology
Cryst. Res. Technol. 35 (2000) 271 - Abstract -

I. Pietzonka, T. Sass, G. Benndorf, R. Franzheld, V. Gottschalch

Fakultät für Chemie und Mineralogie und Fakultät für Physik und Geowissenschaften, Universität Leipzig

MOVPE Growth and Characterisation of Zn-Doped (GaIn)P Layers with Respect to Surface Structure and Ordering

(GaIn)P grown on (001)GaAs substrates by metal-organic vapour phase epitaxy (MOVPE) is highly ordered material. In this work the effect of Zn doping on the epitaxial crystal growth, the ordering behaviour and the surface morphology is investigated. Zn-doped (GaIn)P layers, grown with phosphine (PH3), tertiarybutylphosphine (TBP) and ditertiarybutylphosphine (DitBuPH) as phosphorous precursors, reveal a strong drop of the binary growth rate of InP rInP with increasing Zn/III ratio, whereas rGaP remains nearly constant. The Zn doping efficiency and the ordering behaviour are observed to be dependent on the misorientation of the substrates. Finally, the surface morphology as a function of the different parameters was analysed by atomic force microscopy (AFM), and no considerable change of the growth mechanism was found for Zn-doped layers in comparison to undoped layers.

Keywords: MOVPE, surface structure, GaInP


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