Crystal Research and Technology
Cryst. Res. Technol. 35 (2000) 549 - Abstract -

X. Y. Gong, H. Kan, T. Makino, K. Watanabe*, T. Iida, H. Suzuki, M. Aoyama*, T. Yamaguchi*

Central Research Laboratory, Hamamatsu Photonics K.K., Hirakuchi, Japan
*Research Institute of Electronics, Shizuoka University Johoku, Japan

Light Emitting Diodes Fabricated from Liquid Phase Epitaxial InAs/InAsxP1-x-ySby/InAsx’P1-x’-y’Sby’ and InAs/InAs1-xSbx Multi-Layers

Mid-infrared light emitting diodes (LED) in 3-5µm wavelength range have been fabricated from InAs/InAsxP1-x-ySby/InAsx’P1-x’-y’Sby’ composition graded layer and InAs/InAsSb multilayers. The heterostructures were grown by liquid phase epitaxy (LPE) between 600 and 520°C. An output power of 3.1 mW at 11K and of 10 µW at 300 K have been obtained under a peak current of 100 mA (50 % duty ratio) from InAsSb multilayers. Recombination mechanisms for these diodes were studied by temperature-dependent emission spectra using Fourier transform infrared (FTIR) measurement system with double modulation. The output powers of the LEDs decrease rapidly at temperatures above 153 K suggesting that nonradiative and Auger recombinations are the main limitation of the device performance at high temperatures.

Keywords: InAsSb, InAsPSb, light emitting diode, double modulation, room temperature operation, Auger recombination


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