Crystal Research and Technology
Cryst. Res. Technol. 35 (2000) 663 - Abstract -

A. Hähnel, E. Pippel, J. Woltersdorf

Max-Planck-Institute of Microstructure Physics, Halle, Germany

Nanoprocesses of the Formation of Reaction Layers inSi-C-O Systems

The microstructure and nanochemistry of heat treated sandwich structures consisting of borosilicate glass and 6H-SiC single crystals have been studied using high resolution and analytical TEM. In the interface region a complex interlayer system was found, which mainly contains carbon (near the glass) and silica (near the SiC). A distinct difference in thickness of this reaction interlayer was observed between Si- and C-terminated 6H-SiC, which is attributed to different rates of the corresponding passive oxidation reactions at the interface. In general, the reaction kinetics can be described by a four step model, and is influenced by the formation of metastable silicon oxycarbide at the interfaces, as verified by processing the ELNES of the Si-L23 edge recorded with nanometre resolution.

Keywords: SiC single crystals, borosilicate glass, interlayer formation, silicon oxycarbide, HREM, ELNES



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