K. M. Knowles, S. Turan: High Resolution Transmission Electron Microscopy of Grain Boundaries between Hexagonal Boron Nitride Grains in Si<SUB>3</SUB>N<SUB>4</SUB>

Crystal Research and Technology

Cryst. Res. Technol. 35 (2000) 751 - Abstract -

K. M. Knowles, S. Turan*

Department of Materials Science and Metallurgy, Cambridge, U.K.
*Department of Ceramic Engineering, Eskisehir, Turkey

High Resolution Transmission Electron Microscopy of Grain Boundaries between Hexagonal Boron Nitride Grains in Si₃N₄–SiC Particulate Composites

High resolution transmission electron microscope observations of grain boundaries in hexagonal boron nitride in which adjacent grains are rotated with respect to one another about either <2-1-10> or <10-10> directions are shown to be free of intergranular glass, in agreement with previous work. The implication of these observations is that the solid-solid boundary energies of such grain boundaries in hexagonal boron nitride are relatively small in magnitude.

Keywords: hexagonal boron nitride, transmission electron microscopy, grain boundaries

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