We investigate Si (001) surfaces and bulk structures of molecular beam epitaxial (MBE) grown Si/Si:C heterolayers and describe “plateau-like” surface defects with a hill shape. The diameters of these surface defects are up to few 100 nanometers and their heights lie in the range of some nanometers. Plan-view and cross-sectional TEM bulk analysis of Si/Si:C heterolayers suggest a correlation between the “plateau-like” defects on the surface and extended dislocation structures in the bulk. The nucleation of these defects seems to have a correlation with the carbon present in the Si:C alloy.

Keywords: molecular beam epitaxy, carbon doping, surface and bulk structures, dislocation, oval defect

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