Various extended defects produced by in situ electron irradiation in a high resolution electron microscope (JEOL 4000EX ) at room temperature on {113} and {111} habit planes are reviewed on the base of the results recently obtained. It was observed that both interstitials and vacancies tend to aggregate in the shape of <110>-oriented chain-like defects on {113}, in addition to well-known rod-like defect of interstitial type. These defects are characterized by a different magnitude and opposite type of lattice relaxation introduced in surrounding. <110>-oriented interstitial chains are also formed by agglomeration of interstitials to the core of vacancy or interstitial Frank partial dislocations to provide a relaxation of the strongly deformed crystal areas.

Keywords: silicon, intrinsic point defects, extended defect

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