Quantum wells of the quaternary (GaIn)(NAs) alloy are grown compressively strained on GaAs by metal-organic vapor phase epitaxy (MOVPE) at low temperatures under non-equilibrium conditions. Growth experiments of particular heteroepitaxial multilayer systems are reported and the influence of varying conditions, namely of the arsenic source partial pressure and of the growth rate on the structural quality of the quantum wells is studied. Up to a critical amount of incorporated nitrogen, high perfection layers can be obtained which show a roughness of the interfaces between the wells and the barriers in the range of only a few monolayers. Any phase separation effects have been excluded by exact control of the particular growth conditions. For the structural characterization of the layer systems, conventional and high resolution transmission electron microscopy have been applied.

Keywords: metal-organic vapour phase epitaxy; (GaIn)(NAs); high resolution transmission electron microscopy

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