We present a detailed study about the epitaxial growth of various modern materials systems with large lattice misfit to GaAs substrates. The epitaxial alignment during the initial stage of growth and the misfit accommodation process are determined by the particular interface structures which we have investigated by high-resolution transmission electron microscopy. The results are explained with an extended coincidence lattice model and its general applicability to heteroepitaxial growth of large-misfit systems is discussed.

Keywords: heteroepitaxy, interface structures, transmission electron microscopy, semiconductors, crystal defects

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