Crystal Research and Technology
Cryst. Res. Technol. 35 (2000) 831 - Abstract -

I. Hähnert, A. Knauer*, R. Schneider, I. Rechenberg*, A. Klein*, W. Neumann

Humboldt-Universität zu Berlin, Institut für Physik, AG Kristallographie, Berlin, Germany
*Ferdinand-Braun-Institut für Höchstfrequenztechnik (FBH) Berlin, Germany

{110} and {111} Ordering in MOVPE-grown (Ga,In)P on (001) GaAs Substrates at Low Temperature

The microstructure of (Ga,In)P layers grown by metal organic vapour phase epitaxy (MOVPE) at 580°C was characterized by transmission electron microscopy (TEM), especially by electron diffraction (TED). In lattice-matched (Ga,In)P layers grown on exactly oriented (001) GaAs substrates or low misoriented ones additional intensity maxima occur at about 1/2 1/2 0 interpreted as ordering parallel to {110}. The {110} ordering is present in both undoped and doped layers. The well-known (1-11) ordering was detected in layers grown on (001) substrates with larger misorientation (2° off to {111}B). For the various ordering types a model was developed on the basis of stacking of ordered (001) planes as a kind of polytypism.

Keywords: MOVPE, GaInP epitaxial layers, ordering, electron diffraction


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