Crystal Research and Technology
Cryst. Res. Technol. 35 (2000) 1023 - Abstract -

A. D. Bulanov, G. G. Devyatych, A. V. Gusev, P. G. Sennikov, H.-J. Pohl*, H. Riemann**, H. Schilling**, P. Becker***

Institute of Chemistry of High-Pure Substances RAS, Nizhny Novgorod, Russian Federation
*VITCON Projectconsult GmbH, Jena, Germany
**Institut für Kristallzucht (IKZ), Berlin Adlershof, Germany
***Physikalisch-Technische Bundesanstalt (PTB), Braunschweig, Germany

The Highly Isotopic Enriched (99.9%), High-Pure 28Si Single Crystal

We report on the growth of 99,9 % enriched 28Si, dislocation free monocrystals (111- and 100-orientated) with nearly 10 g weight and less than 1015 foreign atoms/cm3.

Keywords: Si, isotope, monocrystals, dislocation free, high-pure



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