Undoped p-GaSe layered single crystals were grown using Bridgman technique. Thermally stimulated current measurements in the temperature range of 10-300 K were performed at a heating rate of 0.18 K/s. The analysis of the data revealed three trap levels at 0.02 , 0.10 and 0.26 eV. The calculation for these traps yielded 8.8 x 10^-27, 1.9 x 10^-25, and 3.2 x 10^-21 cm² for capture cross sections and 3.2 x 10¹⁴, 1.1 x 10¹⁶, and 1.2 x 10¹⁶ cm^-3 for the concentrations, respectively.

Keywords: semiconductor compounds; layered crystals; GaSe; impurity levels; thermally stimulated current

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