Growth technology of new narrow-gap semiconductor solid solution ZnCdHgTe proposed as an alternative material to CdHgTe due to the stabilizing effect of Zn-Hg bond in the lattice of the compound is presented. Results of electrical examinations performed at the first time for the heterostructures based on ZnCdHgTe are also reported.

Keywords: ZnCdHgTe, tellurides, solid solution, liquid-phase epitaxy, barrier structure, energy band diagram

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