Crystal Research and Technology
Cryst. Res. Technol. 36 (2001) 395 - Abstract -

T. Prutskij, P. Díaz Arencibia*, F. Silva Andrade

Instituto de Ciencias, Universidad Autónoma de Puebla, Puebla, México
*Departamento de Fisica, CINVESTAV, México D.F., México

Study of AlGaAs Laser Heterostructures with Multiquantum Well Active Region Grown by low Temperature Liquid Phase Epitaxy

In this paper we describe the growth and characteristics of AlGaAs/GaAs laser structures with 2, 3, and 4 quantum wells in their active region fabricated by Low-Temperature Liquid Phase Epitaxy (LT-LPE) technique. The technique uses a piston boat and the temperatures of crystallization are in the 400-600°C range. Scanning Electron Microscope and Photoluminescence experiments show the good planarity and reproducibility of these structures. It is shown that the thickness of the QW layers depend on the supercooling temperature for a given growth time and temperature.

Keywords: LPE, quantum well laser structures, photoluminescence


The full text of this paper in pdf-Format:

If you came directly to this page, click this symbol to go to the homepage of CRT.