Crystal Research and Technology
Cryst. Res. Technol. 36 (2001) 457 - Abstract -

A. F. Qasrawi, N. M. Gasanly*

Faculty of Engineering, Atilim University, Ankara, Turkey
*Department of Physics, Middle East Technical University, Ankara, Turkey

Crystal Data, Electrical Resistivity, and Hall Mobility of n-Type AgIn5S8 Single Crystals

The X-ray diffraction has revealed that AgIn5S8 is a single phase crystal of cubic spinel structure. The value of the unit cell parameter for this crystal is 1.08286 nm. The electrical resistivity and Hall effect of n-type AgIn5S8 crystals are measured in the temperature range of 50-400 K. A carrier effective mass of 0.20 m0, an acceptor to donor concentration ratio of 0.8 and an acoustic phonons deformation potential of 20 eV are identified from the Hall effect measurement. The Hall mobility data are analyzed assuming the carrier scattering by acoustic and polar optical phonons, and ionized impurities.

Keywords: AgIn5S8 crystal, resistivity, mobility, acoustic, polar, scattering mechanism


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