Crystal Research and Technology
Cryst. Res. Technol. 36 (2001) 571 - Abstract -

G. Venkata Rao, G. Hema Chandra, O. M. Hussain, S. Uthanna, B. Srinivasulu Naidu

Thin film Laboratory, Department of Physics, Sri Venkateswara University, Tirupati, India

Characteristics of Al/p-Cu0.5Ag0.5InSe2 Polycrystalline Thin Film Schottky Barrier Diodes

Al/p-Cu0.5Ag0.5InSe2 polycrystalline thin film Schottky barrier diodes have been prepared. The current-voltage, capacitance-voltage and photoresponse have been investigated. Various important physical parameters of these diodes were derived from these measurements.

Keywords: Schottky barrier diodes, Cu0.5Ag0.5InSe2 thin films, current-voltage, capacitance-voltage, photoresponse


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