The influence of the melt flow on the temperature field and interface during the vapour-pressure-controlled growth of GaAs was studied numerically with the commercial general-purpose program FIDAP^TM. The thermal boundary conditions for the domain of seed, crystal, boron oxide and crucible were taken from a global calculation for an equipment used at the IKZ to grow 6'' crystals. Due to the large melt volume the buoyancy forces become rather strong and have to be counteracted by reasonable rotation rates. Preliminary results have been obtained for iso- and counter-rotation showing that the flow field exhibits structures on small scales. High rotation rates are needed to counteract the buoyancy flow efficiently and to achieve a smooth flat interface. Even if the the flow structure is not resolved in detail, the interface shape can be deduced form the calculations.

Keywords: fluid flow, Czochralski growth, FIDAP

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