Steady-state heat and mass transport at the SiC growth process are computed by the general-purpose finite-element package FIDAP^TM. Specific features are the radiation exchange in several cavities at temperatures up to 2700 K and concentration dependent Stefan velocities resulting from sublimation/ condensation at the vapour-solid interfaces. The article describes the computational procedure in order to achieve convergence of the temperature and velocity field. The transport rate of the SiC building species meets the range of experimental results.

Keywords: heat transfer, view factor, fluid flow, vapour phase crystal growth, FIDAP

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