This work describes the recent results of gallium nitride and aluminum nitride crystal growth by the High Nitrogen Pressure Solution Growth (HNPSG) method. For GaN, the growth without intentional seeding leads to the growth of hexagonal platelets of average size of 1 cm². The seeded growth into {11-20} and {0001} directions also gives the promising results. The AlN growth without intentional seeding results in needle-like crystals. The influence of supersaturation on habit and morphology of both GaN and AlN crystals is discussed.

Keywords: GaN, AlN, substrates, crystal growth from solution, High Nitrogen Pressure Solution Growth (HNPSG) method, high pressure

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