Crystal Research and Technology
Cryst. Res. Technol. 36 (2001) 903 - Abstract -

E. Zielinska-Rohozinska, J. Gronkowski, M. Regulska, M. Majer, K. Pakula

Institute of Experimental Physics, Warsaw University, Warsaw, Poland

X-ray Diffraction Study of Composition Inhomogeneities in Ga1–xInxN Thin Layers

Inhomogeneities due to alloy fluctuations in MOCVD grown Ga1–xInxN thin films in the compositional range 0 <= x <= 0.093, deposited on GaN sublayers grown on c sapphire plane, are investigated. InGaN films are analyzed by x-ray diffraction profiles and reciprocal space maps in the triple-axis mode. Films grown with the lower In content (x <= 0.085) reveal compositional inhomogeneity as a single extra peak in the diffraction rocking curve which can be attributed to local bilayer growth of the ternary. Films grown with the higher In content exhibit both a smearing of diffraction profiles (quasi-continuous compositional changes) and development of multiple peaks that corresponds to local-domain growth. Non-uniform epitaxial growth results in a composition distribution of the ternary, derived by x-ray measurements, which is compatible with the value of composition obtained from RBS characterization.

Keywords: InGaN layers, high resolution X-ray diffraction


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