A. Misiuk, A. Barcz, J. Ratajczak, J. Katcki, J. Bak-Misiuk, L. Bryja, B. Surma, G. Gawlik: Structure of Oxygen - Implanted Silicon Single Crystals Treated at >= 1400 K under High Argon Pressure

Crystal Research and Technology

Cryst. Res. Technol. 36 (2001) 933 - Abstract -

A. Misiuk, A. Barcz, J. Ratajczak, J. Katcki, J. Bak-Misiuk*, L. Bryja**, B. Surma***, G. Gawlik***

Institute of Electron Technology, Warsaw, Poland
*Institute of Physics, PAS, Warsaw, Poland
**Wroclaw University of Technology, Wroclaw, Poland
***Institute of Electronic Materials Technology, Warsaw, Poland

Structure of Oxygen - Implanted Silicon Single Crystals Treated at >= 1400 K under High Argon Pressure

The structure of oxygen - implanted (up to a dose 6x10¹⁷ cm^-2) silicon, Si:O, treated at 1400 - 1550 K under high (up to 1.5 GPa) argon pressure, was investigated by numerous methods. The oxygen distribution peak narrowed, the dimensions of extended defects decreased and the peak intensity in the Si - O - Si asymmetric stretching vibrational mode diminished with pressure. That effects are explained by decreased misfit at the SiO_2-x / Si boundary and more numerous nucleation sites created in Si:O treated at high pressure.

Keywords: silicon, oxygen, implantation, Si:O, high temperature - pressure, buried oxide layer

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