Crystal Research and Technology
Cryst. Res. Technol. 36 (2001) 943 - Abstract -

B. Surma, L. Bryja*, A. Misiuk**, G. Gawlik, J. Jun***, I. V. Antonova****, M. Prujszczyk**

Institute of Electronic Materials Technology
*Wroclaw University of Technology
**Institute of Electron Technology
***High Pressure Centre
****Institute of Semiconductor Physics

Infrared and Photoluminescence Studies on Silicon Oxide Formation in Oxygen-Implanted Silicon Annealed Under Enhanced Pressure

Influence of hydrostatic pressure (HP) on the evolution of Si-O bond states during annealing (HT) in implanted (dose 1015 – 6 x 1017 at/cm2) Si:O structures was studied by monitoring the features of absorption band associated with Si–O-Si asymmetric stretching mode and defect-related photoluminescence (PL) measurements in the near infrared region. It has been stated that high pressure (HP) treatment significantly changes the defect structure in implanted layer at T >= 1130°C, resulting in the shift of asymmetric stretching vibration mode associated with Si-O bonds towards lower frequencies. Stimulation role of hydrostatic pressure in the generation of Si-O bonds in Si:O structures implanted with low doses of oxygen atoms (1015 –1016 at/cm2) and treated at lower temperatures was found.

Keywords: silicon, oxygen implantation, absorption, luminescence, hydrostatic pressure


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