B. Keszei, Z. Vértesy, G. Vértesy: Growth of Bi and Ga Substituted YIG and LuIG Layers by LPE Method

Crystal Research and Technology

Cryst. Res. Technol. 36 (2001) 953 - Abstract -

B. Keszei, Z. Vértesy, G. Vértesy

Research Institute for Technical Physics and Materials Science, Budapest, Hungary

Growth of Bi and Ga Substituted YIG and LuIG Layers by LPE Method

Bi substituted Y- and Lu- iron garnets are very good materials for different kinds of magneto-optical applications. In this work we report the preparation of Bi,Ga: YIG and Bi,Ga: LuIG layers on Gd-Ga garnet (GGG) substrates grown by conventional, isotherm dipping LPE technique using PbO-Bi₂O₃-B₂O₃ system as a solvent. Electron microprobe analyses of the garnet films were performed by means of energy-dispersive spectrometer and the refractive index of the layers was determined by spectroscopic ellipsometry. The layer growth rate (v_L), saturation magnetisation (4 pi M_S) and the Bi content of the layers were determined as a function of the supercooling of the melt (Δ T) and of the substrate rotation rate (omega) at a given melt composition. From these data several coefficients were calculated. The physical parameters of the films can be very sensitively changed by these growth coefficients. The Faraday rotation of our Y_2.5Bi_0.5Fe_3.8Ga_1.2O₁₂ and Lu₂Bi₁Fe_4.1Ga_0.9O₁₂ garnet layers is ≈4.8x10³ and ≈8.3x10³deg/cm at 633 nm wavelength, respectively.

Keywords: layer growth, Bi substituted YIG, liquid phase epitaxy (LPE), EPMA, optical magnetometer and magneto-optic

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