The structure, morphology and optical properties of GaN films deposited by metalorganic vapour phase epitaxy (MOVPE) on alternative substrates: ZnO, NdGaO, YSZ (yttria stabilized zirconia). Scanning electron microscopy, X-ray diffraction and photoluminescence were used for the epitaxial layers characterisation. The obtained results have been compared to those of GaN layers grown on c-plane sapphire substrates. It was established that the most important step towards the realisation of device quality GaN material on alternative substrates is the first stage of the growth process.

Keywords: GaN, sapphire substrates, alternative substrates, metalorganic vapour phase epitaxy

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