Influence is studied of complex doping of InSb microcrystals and GaAs epitaxial layers with admixtures of Sn, Au, Al, Yb, Cr and Mn upon electrophysical parameters of the materials, their time stability and hardness to the fast neutron irradiation. It is found that for GaAs epitaxial layers considerable decrease in the free charge carrier concentration may be achieved by optimal quantitative combination of Al and Yb dopant during growth. For InSb microcrystals Sn admixture provides the desired range of free charge carrier concentrations from the intrinsic one up to 10¹⁹ cm^-3. Au admixture is a good catalyzer for whisker microcrystal growth and it facilitates InSb growth, while Cr admixture improves radiation resistance of the microcrystals. The possibility of application of the obtained materials for the development of Hall sensors operating efficiently under extreme external conditions, in particular under the conditions of high radiation loads, is verified.

Keywords: III-V semiconductor, crystal growth, complex doping, electrical properties

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