J. Bak-Misiuk, E. Dynowska, A. Misiuk, M. Calamiotou, A. Kozanecki, J. Domagala, D. Kuristyn, W. Glukhanyuk, A. Georgakilas, J. Trela, J. Adamczewska: Effect of High Temperature-Pressure on GaAs Layers Grown on Vicinal Si Substrates

Crystal Research and Technology

Cryst. Res. Technol. 36 (2001) 997 - Abstract -

J. Bak-Misiuk, E. Dynowska, A. Misiuk*, M. Calamiotou**, A. Kozanecki, J. Domagala, D. Kuristyn, W. Glukhanyuk, A. Georgakilas***, J. Trela, J. Adamczewska

Institute of Physics, Polish Academy of Sciences, Warsaw, Poland
*Institute of Electron Technology, Warsaw, Poland
**Physics Department, University of Athens, Greece
***Physics Department, FORTH / IESL and University of Crete, Greece

Effect of High Temperature-Pressure on GaAs Layers Grown on Vicinal Si Substrates

The effect of high hydrostatic pressure - high temperature treatment on strain state of thin GaAs layers, grown on vicinal (001) Si substrate, misoriented towards [110] with different miscut angles and with two different orientations of GaAs layer in relation to the miscut direction, was investigated by X-ray diffraction methods. The strain of the GaAs layers and GaAs/Si samples bending decreases when subjected to the treatment at T = 670 K under enhanced hydrostatic pressure (1.2 GPa). Dependence between the stress-induced structural changes and the orientation of GaAs miscut angle as well as peculiarities of the temperature-pressure treatment were determined. It has been shown that the amount of relaxed strain depends on the initial defect structure of the GaAs/Si hetrostructure. After re-annealing the samples at higher temperature (870 K - 1.2 GPa), the strain and sample bending were the same as that after the treatment at 670 K - 1.2 GPa but the defect structure of layers was improved.

Keywords: semiconductors, thin layer, high temperature-high pressure, X-ray diffraction

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