Growth technology and electric properties of the new semiconductor compound ZnCdHgTe obtained by modified liquid phase epitaxy technique on (111) CdTe single crystal substrates are described. Principal attention is focused on current-voltage characteristics of the heterostructures Zn_xCd_yHg_1-x-yTe/CdTe. The mechanism of carriers transfer, in particular, multi-mode regime governed by the charge states localized at the interface, is studied. Results of numerical experiment performed for the first time for examined heterostructures are in good qualitative and quantitative agreement with the data of electric measurements.

Keywords: ZnCdHgTe, heterostructure, band-gap fluctuations, current-voltage characteristics

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