B. Sciana, D. Radziewicz, B. Paszkiewicz, M. Tlaczala, M. Utko, P. Sitarek, J. Misiewicz, R. Kinder, J. Kovac: Epitaxial Growth and Characterisation of Silicon Δ-Doped GaAs, AlAs and Al<SUB>x</SUB>Ga<SUB>1-x</SUB>As

Crystal Research and Technology

Cryst. Res. Technol. 36 (2001) 1145 - Abstract -

B. Sciana, D. Radziewicz, B. Paszkiewicz, M. Tlaczala, M. Utko, P. Sitarek, J. Misiewicz, R. Kinder*, J. Kovac*

Wroclaw University of Technology, Poland
*Slovak University of Technology, Bratislava, Slovak Republic

Epitaxial Growth and Characterisation of Silicon Delta-Doped GaAs, AlAs and Al_xGa_1-xAs

Investigation of MOVPE growth of silicon delta-doped GaAs, AlAs and Al_xGa_1-xAs epilayers and different methods used for their characterisation are presented. The epitaxial structures were grown in an atmospheric pressure horizontal AIX 200 Aixtron reactor. Delta doping was formed by SiH₄ introduction during the growth interruption. The influence of the growth temperature and Al_xGa_1-xAs composition on delta-doping characteristics, carrier concentration and mobility is discussed. Properties of the investigated Si delta-doped structures were examined using capacitance-voltage measurements, Van der Pauw-Hall measurements (300K, 77K), photocurrent measurements, photoreflectance spectroscopy and X-ray measurements.

Keywords: MOVPE growth, delta-doping, two-dimensional electron gas, capacitance-voltage measurements, photocurrent spectra, photoreflectance spectroscopy

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