| Crystal Research and Technology |
In this paper the effect of the growth temperature fluctuation, for instance, the transient furnace temperature variation due to a short-term electric power supply interruption on BBO crystal growth was investigated based on the theory of temperature wave transmitting in melt and the boundary layer theory of melt. It was found that the critical width of the temperature pulse to avoid the temperature wave penetrating through the boundary layer and reaching to the growth interface at a constant rotation speed (9-4 r/min) is 69-150 s and the corresponding amplitude of the temperature pulse is high more than 60°C due to the large thickness of the velocity boundary layer of the melt. This result indicates that a small transient temperature fluctuation has no significant effect on the crystal quality, and therefore implies that not only transport processes but interface growth kinetics, a two-dimensional nucleation growth mode at the interface may also dominate the crystal growth.
Keywords: β-BaB2O4 (BBO), flux pulling method, interface stability, temperature wave theory, boundary layer theory
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