Infrared absorption on GaAs doped with Chalcogenides under hydrogen plasma treatment has shown the presence of two new localised modes, namely stretching and wagging modes. We present a simple nine atom molecular model to compute these defect modes by assuming the hydrogen to be bound in the antibonding position of the nearest Ga atom, resulting in a defect complex of C_3V symmetry. Group theoretical methods are employed to obtain the frequencies of the normal modes enabling precise identification of localised modes.

Keywords: localised vibrational modes, symmetry coordinates, point group

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