Crystal Research and Technology
Cryst. Res. Technol. 36 (2001) 1393 - Abstract -

N. M. Gasanly, A. Aydinli*, H. Özkan

Department of Physics, Middle East Technical University, Ankara, Turkey
*Department of Physics, Bilkent University, Ankara, Turkey

Resonant Raman Scattering near the Free-to-Bound Transition in Undoped p-GaSe

Raman spectra of GaSe layered crystal have been measured using a He-Ne laser and temperature tuning the free-to-bound gap in the range 10-290 K. Resonance enhancement of E’’(2) mode has been observed for both incident and scattered photon energies equal to the free-to-bound transition energy.

Keywords: resonant Raman scattering, semiconductor compounds, layered crystals, GaSe


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