Crystal Research and Technology
Cryst. Res. Technol. 37 (2002) 219 - Abstract -

Y. T. Kim, B. Hong*, G. E. Jang**, S. J. Suh, D. H. Yoon

Department of Advanced Materials Engineering, Sungkyunkwan University, Suwon, Korea
*School of Electrical and Computer Engineering, Sungkyunkwan University, Suwon, Korea
**Department of Materials Science and Materials Engineering, Chungbuk University, Cheongju, Korea

Characterization of a-SiC:H Films Deposited by RF Plasma CVD

The effects of annealing temperature on the structure of hydrogenated amorphous silicon carbide (a-SiC:H) films prepared by RF plasma CVD were investigated by using X-ray diffraction, UV-VIS spectrophotometer and atomic force microscopy techniques. It was found that an annealing process results in structural rearrangement. The amorphous phase transforms into the crystalline β -SiC phase at an annealing temperature of approximately 900°C.

Keywords: chemical vapor deposition, silicon carbide, annealing, crystallization


The full text of this paper in pdf-Format:

If you came directly to this page, click this symbol to go to the homepage of CRT.