Crystal Research and Technology
Cryst. Res. Technol. 37 (2002) 259 - Abstract -

V. Vorlícek, K. D. Moiseev*, M. P. Mikhailova*, Yu. P. Yakovlev*, E. Hulicius, T. Simecek

Institute of Physics, Academy of Sciences of the Czech Republic, Praha
*A. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg

Raman Scattering Study of Type II GaInAsSb/InAs Heterostructures

Ga1-xInxAsySb1-y quaternary solid solutions lattice-matched to the InAs (001) substrate with composition in the range 0.06 <= x <= 0.22 were grown by liquid phase epitaxy. Two peaks are observed in their Raman spectra over this composition range. The assignment of the observed modes to GaAs-like and (GaSb+InAs)-like mixture modes is discussed. The modified REI model developed by JAW et al. seems to describe the observed behaviour reasonably. Possibility of determination of the alloy composition from Raman spectra is considered.

Keywords: III-V alloy compound semiconductors, phonons, Raman spectra, liquid phase epitaxy, mid-infrared optoelectronics


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