The chemical deposition of palladium on n and p-GaAs from an aqueous solution of PdCl₂, in strong acid medium can be an alternative technique for contacts on GaAs. This paper presents the variations of palladium films thickness (measured by an interferometric method) as a function of solution concentration, reaction time and substrate conductivity. There are presented data concerning the adhesion of palladium films (measured by a mechanical method) related to the film thickness. From a comparative study concerning the adhesion of evaporated films such as: Au/n-GaAs, Ag/n-GaAs, Au-Ge/n-GaAs and Pd/n-GaAs, it results the conclusion that the adhesion of palladium films are of the same order of magnitude as the metallic films evaporated without an annealing procedure.

Keywords: palladium, GaAs, chemical deposition, adhesion measurement

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