| Crystal Research and Technology |
Hydrogenated amorphous silicon films (α-Si:H) were crystallized employing a metal induced crystalline (MIC) technique. Structural changes during annealing these films at 300°C for different periods (0-300minutes) were obtained by XRD. Al was used as a metal induced crystalline for α-Si:H produced by ultra high vacuum (UHV) plasma enhanced chemical vapor deposition (PECVD). XRD shows that crystallization of the interacted α-Si:H film underneath Al initiates at 300°C for 15 minutes. A complete crystallization was obtained after annealing for 60 minutes. A gold dot was evaporated onto α-Si:H films, which annealed for different periods to form Schottky barriers. Electrical properties of Au/α-Si:H were calculated such as the ideality factor, barrier height, donor concentration and the diffusion voltage as a function of the annealing time of α-Si:H films. All these parameters were carried out through the current voltage characteristics (J-V) and the capacitance voltage measurements (C-V). The results were presented a discussed on the basis of XRD performance and the thermionic emission theory.
Keywords: hydrogenated amorphous Si, crystallization, PECVD, Schottky barrier, electrical properties
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