U. Kaiser, J. Biskupek, D. A. Muller, K. Gärtner, Ch. Schubert: Properties of GeSi Nanocrystals Embedded in Hexagonal SiC

Crystal Research and Technology

Cryst. Res. Technol. 37 (2002) 391 - Abstract -

U. Kaiser, J. Biskupek, D. A. Muller*, K. Gärtner, Ch. Schubert

Institut für Festkörperphysik, Friedrich Schiller Universität, Jena 07743, Germany
*Bell Laboratories, Lucent Technologies, Murray Hill, NJ 07974, USA

Properties of GeSi Nanocrystals Embedded in Hexagonal SiC

In this paper high-resolution electron microscopy investigations and molecular dynamics simulations of GeSi nanocrystals buried in 4H-SiC are performed, showing that the experimentally observed shapes of the GeSi nanocrystals are strongly correlated with their orientational relationships. Measurements of the lattice spacing suggest that the nanocrystals are strained. Quantum confinement in selected nanocrystals has been detected using spatially-resolved electron energy loss spectroscopy performed in conjunction with atomic resolution annular dark-field scanning TEM.

Keywords: HRTEM, implantation, Ge-Nanocrystals, Molecular dynamics, EELS-HAADF, Quantum confinement

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