Crystal Research and Technology
Cryst. Res. Technol. 37 (2002) 407 - Abstract -

Z. Galazka , S. Ganschow*, P. Reiche*, R. Uecker*

Institute of Electronic Materials Technology, 133 Wolczynska Street, 01-919 Warsaw, Poland
*Institute of Crystal Growth, Max-Born-Strasse 2, 12489 Berlin, Germany

Experimental Study of Interface Inversion of Tb3ScxAl5-xO12 Single Crystals Grown by the Czochralski Method

Thermal conditions and rotation rate were examined experimentally for obtaining a flat interface growth of high melting-point oxide (Tb3ScxAl5-xO12 - TSAG) by the Czochralski method. The critical crystal rotation rate can be significantly reduced, of about twice at low and very low temperature gradients comparing to medium temperature gradients in the melt and surroundings of the crystal. The interface shape of TSAG crystals is not very sensitive on crystal rotation rate at small rotations and becomes very sensitive at higher rotations, when the interface transition takes place. The range of crystal rotation rates during the interface transition from convex to concave decreases with a decrease of temperature gradients. At low temperature gradients interface inversion crystals takes place in very narrow range of rotation rates, which does not allow one to growth such crystals with the flat interface. Even changing crystal rotation rate during the growth process in a suitable manner did not prevent the interface inversion from convex to concave and thus did not allow to obtain and maintain the flat interface.

Keywords: Czochralski method, crystal growth, interface inversion, Tb3ScxAl5-xO12


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