Crystal Research and Technology
Cryst. Res. Technol. 37 (2002) 431 - Abstract -

X. H. Xu, M. Wang, Y. Hou, S. R. Zhao, H. Wang, D. Wang, S. X. Shang*

State Key Lab. of Crystal Materials, Shandong University, Jinan 250100, P. R. China
*School of Environment Science and Engineering, Shandong University, Jinan 250100, P. R. China

Effect of Thermal Annealing on Structural Properties, Morphologies and Electrical Properties of TiO2 Thin Films Grown by MOCVD

TiO2 thin films, were deposited on Si(100) and Si(111) substrates by metalorganic chemical vapor deposition at 500ºC, and have been annealed for 2 min, 30 min and 10 hours at the temperature from 600ºC to 900ºC, in oxygen and air flow, respectively. XRD and atomic force microscopy characterized the structural properties and surface morphologies of the films. As-deposited films show anatase polycrystalline structure with a surface morphology of regular rectangled grains with distinct boundaries. Rutile phase formed for films annealed above 600ºC, and pure rutile polycrystalline films with (110) orientation can be obtained after annealing under adequate conditions. Rutile annealed films exhibit a surface morphology of equiaxed grains without distinct boundaries. The effects of substrate orientation, annealing time and atmosphere on the structure and surface morphology of films have also been studied. Capacitance-Voltage measurements have been performed for films deposited on Si(100) before and after annealing. The dielectric properties of TiO2 films were greatly improved by thermal annealing above 600ºC in oxygen.

Keywords: metalorganic chemical vapor deposition, titanium oxide, annealing, structure and surface morphology, dielectric property


The full text of this paper in pdf-Format:

If you came directly to this page, click this symbol to go to the homepage of CRT.