U. Kaiser, Th. Kups, A. Fissel, W. Richter: Structure of SiC-Quantum Wells Studied by TEM and CBED

Crystal Research and Technology

Cryst. Res. Technol. 37 (2002) 466 - Abstract -

U. Kaiser, Th. Kups, A. Fissel, W. Richter

Institut für Festkörperphysik, Friedrich Schiller Universität, Jena 07743, Germany

Structure of SiC-Quantum Wells Studied by TEM and CBED

Multi-quantum well structures of 3C/4H-SiC polytypes grown either on stepped or on on-axis hexagonal SiC by molecular beam epitaxy have been investigated by conventional and high resolution TEM. The 3C-SiC layers were nearly free of defects and the interface between different polytypes was abrupt. For the 3C-SiC layers the strain state and the lattice parameters have been investigated to a high accuracy by convergent beam electron diffraction (CBED).

Keywords: SiC, heterostructures, TEM, convergent beam electron diffraction, lattice parameter

The full text of this paper in pdf-Format:

If you came directly to this page, click this symbol

to go to the homepage of CRT.